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Usually polymers are the only materials which fulfill these requirements. The interaction of organic polymers with energetic electrons or ultraviolet light results in structurally changed molecules which may either be broken down to smaller fragments or link together to form larger molecules. Interaction that causes a break in the main polymer chain and results in irradiated material having a lower average molecular weight than un-irradiated material allows positive-working resists to be formulated. Clearly the successful removal of irradiation-degraded polymer without affecting the un-irradiated material in the development process will occur if the original polymer has the highest possible molecular weight and is irradiated by moderate doses of electrons or ultraviolet light. Moreover, a polymer with a low glass transition temperature can easily be deformed and the resolution of fine patterns developed in a film of such a polymer may be impaired. Thus good positive resists should have a glass transition temperature above the highest temperature to which the resist will be subjected after development of the irradiated pattern in it.